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Influences of ZnO buffer layers on the quality of ZnO films synthesized by the metal-organic chemical vapor deposition process

✍ Scribed by Sun-Hong Park; Chul-Hwan Choi; Kyoung-Bo Kim; Seon-Hyo Kim


Book ID
107452895
Publisher
Springer US
Year
2003
Tongue
English
Weight
218 KB
Volume
32
Category
Article
ISSN
0361-5235

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## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The