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Influence of annealing on ZnO films grown by metal–organic chemical vapor deposition

✍ Scribed by Hongxia Li; Hong Liu; Jiyang Wang; Shushan Yao; Xiufeng Cheng; R.I. Boughton


Book ID
116730662
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
292 KB
Volume
58
Category
Article
ISSN
0167-577X

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Annealing effects on electrical and opti
✍ Jingchang Sun; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Ziwen Zhao; 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 575 KB

## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The