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Influence of the surface and the episubstrate interface on the drain current drift of GaAs MESFET's

✍ Scribed by Itoh, H.; Ohata, K.; Hasegawa, F.


Book ID
114593812
Publisher
IEEE
Year
1981
Tongue
English
Weight
490 KB
Volume
28
Category
Article
ISSN
0018-9383

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We show that the bonding structures and electrical properties of the HfO 2 /GaAs interface can be controlled by a choice of the reconstruction on the initial GaAs surface. Electron-beam evaporation of HfO 2 onto the c(4 Γ‚ 4) surface yielded As-O bonds at the interface, while Ga-O bonds were dominant