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Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO[sub 2] interface

✍ Scribed by Baldovino, Silvia; Molle, Alessandro; Fanciulli, Marco


Book ID
121457913
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
423 KB
Volume
96
Category
Article
ISSN
0003-6951

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Influence of the oxidation temperature o
✍ S. Baldovino; A. Molle; M. Fanciulli πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 562 KB

GeO 2 was proposed as valuable passivation layer at the surface with Ge to integrate oxide with high dielectric constant in Ge-based logic devices. Hence, the identification of the defects present at different Ge/GeO 2 interfaces becomes a mandatory issue to predict the electrical features of device