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Influence of the growth-surface on the incorporation of phosphorus in SiC

✍ Scribed by E. Rauls; U. Gerstmann; Th. Frauenheim

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
440 KB
Volume
243
Category
Article
ISSN
0169-4332

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Large SiC crystals can be grown by a sublimation process. For electronic application the control of the growth of a definite polytype is important. We have shown that sublimation growth on the Si[0001] side, under given conditions, always crystallizes the 6H polytype regardless of the polytype of th