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Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs

โœ Scribed by H.C. Casey Jr.; M.B. Panish; K.B. Wolfstirn


Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
831 KB
Volume
32
Category
Article
ISSN
0022-3697

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Experiments have shown that ultrafast optical excitation of semiconductors can produce oscillating changes in the optical properties of the material. The frequency of the oscillations in transmission or reflection usually matches one of the phonon modes, typically the q = 0 optical mode. These oscil