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Influence of the growth conditions on the composition of Al nitride films by laser ablation

✍ Scribed by A. Basillais; C. Boulmer-Leborgne; J. Mathias; N. Laidani; A. Laurent; J. Perrière

Publisher
Springer
Year
2000
Tongue
English
Weight
133 KB
Volume
71
Category
Article
ISSN
1432-0630

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Thin films of nasicon structure have been grown from NaM,(PO,), (M = Ti and Zr) targets onto silicon substrates by the laser ablation method. By the complementary use of electron microscopy, Rutherford backscattering spectrometry and X-ray diffraction techniques. the surface morphology of the deposi