Growth and characterization of nasicon thin films by the laser ablation method

✍ Scribed by M. Morcrette; P. Barboux; A. Laurent; J. Perrière

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 921 KB
• Volume: 93
• Category: Article
• ISSN: 0167-2738
• DOI: 10.1016/s0167-2738(96)00530-9

✦ Synopsis

Thin films of nasicon structure have been grown from NaM,(PO,), (M = Ti and Zr) targets onto silicon substrates by the laser ablation method. By the complementary use of electron microscopy, Rutherford backscattering spectrometry and X-ray diffraction techniques. the surface morphology of the deposited lilms, their composition and their crystalline structure have been studied as a function of the main growth conditions. Titanium-based composition yields smooth films that can only be crystallized by post-deposition high temperature annealing in oxygen or air. Zirconium-based films arc directly crystallized during the deposition process, but exhibit a rough morphology associated to an important 'splashing effect' during the laser irradiation of the Zr-based target. Mixtures of Ti and Zr in the target lead to smooth in situ partly crystallized films.