Growth and characterization of β-SiC films obtained by fs laser ablation
✍ Scribed by C. Ghica; C. Ristoscu; G. Socol; D. Brodoceanu; L.C. Nistor; I.N. Mihailescu; A. Klini; C. Fotakis
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 716 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
High quality epitaxial thin films of YBa2Cu307 have been deposited on single crystal Mg0 (i00), SrTi03 (i00), and LaAIO 3 (i00) by laser ablation. The transport critical current density at 77 K is in the range of 106 -107 A/cm 2 depending on the type of substrate. An alternative way to measure the c
The structure and morphology of chromium disilicide (CrSi 2 ) nanometric films grown on h1 0 0i silicon substrates both at room temperature (RT) and at 740 K by pulsed laser ablation are reported. A pure CrSi 2 crystal target was ablated with a KrF excimer laser in vacuum ($3 Â 10 À5 Pa). Morphologi