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Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

โœ Scribed by S. Weingart; C. Bock; U. Kunze; K.V. Emtsev; Th. Seyller; L. Ley

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
296 KB
Volume
42
Category
Article
ISSN
1386-9477

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T1BiSe2 thin films were fabricated by electron-beam evaporation and the influence of the deposition rate on the growth was investigated by transmission electron microscopy (TEM) and IR reflectivity measurements in the plasma edge reflectance region. It was determined that depending on the deposition