The influence of the growth parameters on the structural and electronic properties of TlBiSe2 thin films

✍ Scribed by C.L. Mitsas; E.K. Polychroniadis; D.I. Siapkas

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 676 KB
• Volume: 14
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90073-i

✦ Synopsis

T1BiSe2 thin films were fabricated by electron-beam evaporation and the influence of the deposition rate on the growth was investigated by transmission electron microscopy (TEM) and IR reflectivity measurements in the plasma edge reflectance region. It was determined that depending on the deposition rate two types of films are produced with significantly different microstructural, optical and electrical transport properties. In particular, incoherent grain boundaries present in the films fabricated with high deposition rates drastically reduce the reflectivity in the NaCl substrate reststrahlen region. This is attributed to a large increase in the free carrier scattering frequency 7p, a consequence of which is the reduction of the free carrier mobility # and of the conductivity in these films by as much as 4 and 14 times respectively, compared with thin films fabricated by low deposition rates.