Influence of the forming electrolyte on the electrical properties of tantalum and niobium oxide films: an EIS comparative study
β Scribed by G. E. Cavigliasso; M. J. Esplandiu; V. A. Macagno
- Book ID
- 111529648
- Publisher
- Springer
- Year
- 1998
- Tongue
- English
- Weight
- 210 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0021-891X
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π SIMILAR VOLUMES
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303-973 K. The variation of cathode potent
It has been shown previously that the kinetics of anodic film growth on Ta, Nb and Zr often depend strongly on the nature of the electrolyte. This work is an attempt to resolve this anomaly and the inconsistencies in the reported structures of the oxide layers. Electron diffraction showed the anodic