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Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy

✍ Scribed by Blank, H.-R.; Thomas, M.; Wong, K. C.; Kroemer, H.

Book ID: 120288664
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 473 KB
Volume: 69
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.116886

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