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Influence of temperature time and depth profiles on the pulsed XeCl laser crystallization of evaporated silicon films

✍ Scribed by E. D'Anna; A. Luches; M. Martino; M. Jergel; S. Luby; E. Majkova; I. Vavra

Book ID
115990604
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
397 KB
Volume
192-193
Category
Article
ISSN
0022-3093

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PbTe films, undoped and doped with 0.02,0.3 mol% Cr and 0.02 mol% Co, grown by pulsed-laser evaporation (PLE) on different types of substrates have been investigated. The crystal structure of the films was studied by X-ray diffraction. Along with the stable fcc phase, metastable GeS-and CsCI-type ph