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Influence of surface defects on the electrical behavior of aluminum‐porous silicon junctions

✍ Scribed by Cadet, C.; Deresmes, D.; Vuillaume, D.; Stievenard, D.

Book ID
115539340
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
621 KB
Volume
64
Category
Article
ISSN
0003-6951

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The electrical current of porous silicon (PS) has been measured while several treatments are made to the samples. When the samples are exposed to air, the DC current increases or decreases depending on the surface conditions of the samples. These results, found to be caused by water vapors in air, c