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Influence of strain on annealing effects of In(Ga)As quantum dots

โœ Scribed by Y.C Zhang; Z.G Wang; B Xu; F.Q Liu; Y.H Chen; Philip Dowd

Book ID
108341704
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
186 KB
Volume
244
Category
Article
ISSN
0022-0248

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Quantum dots of InSb, GaSb, and AlSb were grown on GaAs by molecular beam epitaxy and characterized by atomic force microscopy (AFM), photoluminescence, and Raman spectroscopy. AFM measurements reveal that InSb morphology can be a function of the initial GaAs surface reconstruction. Photoluminescenc