Composition and strain of self-assembled
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B.R. Bennett; B.V. Shanabrook; E.R. Glaser; R. Magno; M.E. Twigg
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Article
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1997
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Elsevier Science
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English
⚖ 279 KB
Quantum dots of InSb, GaSb, and AlSb were grown on GaAs by molecular beam epitaxy and characterized by atomic force microscopy (AFM), photoluminescence, and Raman spectroscopy. AFM measurements reveal that InSb morphology can be a function of the initial GaAs surface reconstruction. Photoluminescenc