In this paper the intersubband optical transitions in quantum dots are studied. Theoretical calculations of peak wavelengths and oscillator strengths of the transitions from the bound to ΓΏrst and second excited states were made for the InxGa1-xAs=GaAs and InAs=AlxGa 1-x As systems. The results show
Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors
β Scribed by X.-F. Yang; X.-S. Chen; W. Lu; Y. Fu
- Book ID
- 107470306
- Publisher
- Springer-Verlag
- Year
- 2008
- Tongue
- English
- Weight
- 867 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1931-7573
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot
We present Raman-scattering results for CdTe nanocrystals in doped glasses which clearly show the confinement effects on the phonon spectra as a function of the quantum-dot size. We observed optical phonon modes, surface phonons and some of their overtone combinations. We show that the surface-phono