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Influence of stoechiometry and hydrogen bonding on the insulating properties of PECVD silicon nitride

✍ Scribed by C. Chaussat; E. Bustarret; J.C. Bruyere; R. Groleau

Publisher: Elsevier Science
Year: 1985
Weight: 238 KB
Volume: 129
Category: Article
ISSN: 0378-4363
DOI: 10.1016/0378-4363(85)90572-8

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