Influence of silicon on the physical properties of diamond-like films
β Scribed by F. Demichelis; C.F. Pirri; A. Tagliaferro
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 242 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0921-5107
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β¦ Synopsis
The effect of the inclusion of silicon atoms in the network of diamond-like carbon (amorphous carbon and hydrogenated amorphous carbon) is studied. Samples of amorphous hydrogenated CSi are deposited by means of a sputter-assisted plasma chemical vapour deposition system in which a carbon target is sputtered in an atmosphere composed of silane-diluted argon, where the silane flow rate is varied. It is shown that initially the effect of silicon inclusion is to reduce the size of the graphitic-like islands. When the amount of silicon is increased over a critical value, the network assumes the characteristic of the semiconductor-type amorphous hydrogenated SiC, where the properties of silicon are predominant.
π SIMILAR VOLUMES
Some experimental results related to a structural study of diamond-like films on silicon substrates are reported. Surface analysis techniques such as electron microscopy, transmission electron microscopy and infrared spectroscopy are used and a conclusion is given.