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Influence of silicon on the physical properties of diamond-like films

✍ Scribed by F. Demichelis; C.F. Pirri; A. Tagliaferro


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
242 KB
Volume
11
Category
Article
ISSN
0921-5107

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✦ Synopsis


The effect of the inclusion of silicon atoms in the network of diamond-like carbon (amorphous carbon and hydrogenated amorphous carbon) is studied. Samples of amorphous hydrogenated CSi are deposited by means of a sputter-assisted plasma chemical vapour deposition system in which a carbon target is sputtered in an atmosphere composed of silane-diluted argon, where the silane flow rate is varied. It is shown that initially the effect of silicon inclusion is to reduce the size of the graphitic-like islands. When the amount of silicon is increased over a critical value, the network assumes the characteristic of the semiconductor-type amorphous hydrogenated SiC, where the properties of silicon are predominant.


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Structural study of diamond-like films o
✍ N.B. Velchev; G.D. Beshkov πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 837 KB

Some experimental results related to a structural study of diamond-like films on silicon substrates are reported. Surface analysis techniques such as electron microscopy, transmission electron microscopy and infrared spectroscopy are used and a conclusion is given.