Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence
✍ Scribed by P. Aella; S. Ingole; W. T. Petuskey; S. T. Picraux
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 578 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0935-9648
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract In this work the influence of time dependence of temperature on kinetic processes during nucleation on a simple model is studied. The nucleation rate and the average effective radius of nuclei __R__ is counted. It is proved that in the case of oscillating temperature the nucleation rate
Pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon is reported. A square waveform substrate bias was implemented in this investigation employing a pulse ON bias voltage of --250 V and a pulse OFF bias voltage of 0 V. An evaluation of the pulse ON fractions of 0.17 and 0.50 r