Influence of oxygen precipitates on the warpage of annealed silicon wafers
β Scribed by Deren Yang; Gan Wang; Jin Xu; Dongsheng Li; Duanlin Que; C. Funke; H.J. Moeller
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 292 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0167-9317
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## Abstract In this paper, the effect of annealing atmosphere on oxygen precipitation and formation of denuded zone (DZ) in Czochralski (CZ) silicon has been investigated. It was revealed that the highβtemperature annealings in various atmospheres resulted in almost identical oxygen outdiffusion le
The evolution of oxygen precipitates (OPs) created at 900-1000 K in Si-Cz with initial oxygen concentration 8 Γ 1017 cm -3 was studied by DLTS technique. The samples were subjected to high pressure (HP) treatment up to 1.3 GPa at high temperature (HT, 1230-1550 K) which caused a partial dissolution