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Influence of oxygen on the behaviour of diodes fabricated from sputtered TiO2 films on gold

✍ Scribed by R. Jérisian; J.P. Loup; J. Gautron

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
346 KB
Volume
115
Category
Article
ISSN
0040-6090

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TiO 2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO 2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 °C. The str