TiO 2 thin films were deposited on unheated and heated glass substrates at an elevated sputtering pressure of 3 Pa by radio frequency (RF) reactive magnetron sputtering. TiO 2 films deposited at room temperature were annealed in air for 1 h at various temperatures ranging from 300 to 600 Β°C. The str
The influence of annealing temperature on the structure and properties of TiO2films prepared by sputtering
β Scribed by Liu Baoshun; Zhao Xiujian; Zhao Qingnan
- Publisher
- Wuhan University of Technology
- Year
- 2006
- Tongue
- English
- Weight
- 701 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1000-2413
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