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Influence of oxygen on the activation of p-type GaN

โœ Scribed by Hull, B. A.; Mohney, S. E.; Venugopalan, H. S.; Ramer, J. C.


Book ID
120063871
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
229 KB
Volume
76
Category
Article
ISSN
0003-6951

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## Abstract We demonstrated activation annealing of Mgโ€doped pโ€type Al~0.17~Ga~0.83~N in different gases. The hole concentration of Al~0.17~Ga~0.83~N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3โ€‰ร—โ€‰10^16^โ€‰cm^โˆ’3^ at room temperature was achieved by a