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Electrical properties of p-type GaN:Mg codoped with oxygen

✍ Scribed by Korotkov, R. Y.; Gregie, J. M.; Wessels, B. W.

Book ID
118743770
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
370 KB
Volume
78
Category
Article
ISSN
0003-6951

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Electrical Properties of the Si Implanta
Electrical Properties of the Si Implantation in Mg Doped p-GaN
✍ Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 122 KB πŸ‘ 2 views

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100