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Influence of oxygen argon ratio on the structural, electrical, optical and thermoelectrical properties of Al-doped ZnO thin films

✍ Scribed by L. Li; L. Fang; X.M. Chen; J. Liu; F.F. Yang; Q.J. Li; G.B. Liu; S.J. Feng

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 213 KB
Volume: 41
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2008.07.001

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## Abstract Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of