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Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells

โœ Scribed by J. Misiewicz; P. Sitarek; K. Ryczko; R. Kudrawiec; M. Fischer; M. Reinhardt; A. Forchel

Book ID
108360894
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
93 KB
Volume
34
Category
Article
ISSN
0026-2692

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## Abstract The differential gain and linewidth enhancement factor (__ฮฑ__ โ€factor) of a new material system InGaAsN/GaAs is studied using the 10โ€band **__k__** ยท **__p__** Hamiltonian matrix. A selfโ€consistent scheme which involves simultaneous solution of the Schrรถdinger and Poisson equations is a