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Thermal escape process of photogenerated carriers from GaAs single-quantum-well contained in GaAs/AlAs superlattices

โœ Scribed by A. Satake; T. Tanigawa; Y. Tanaka; K. Fujiwara


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
286 KB
Volume
42
Category
Article
ISSN
1386-9477

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The temperature dependence of the emission properties in a composite quantum well structure consisting of a wide and a narrow GaAs quantum well (QW) separated by and embedded in a GaAs=AlAs short-period superlattice (SPS) has been studied by steady-state and time-resolved photoluminescence (PL) meas