Influence of N on the electronic properties of GaAsN alloy films and heterostructures
β Scribed by Reason, M.; Jin, Y.; McKay, H. A.; Mangan, N.; Mao, D.; Goldman, R. S.; Bai, X.; Kurdak, C.
- Book ID
- 119940171
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 873 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0021-8979
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## Abstract GdCo~4~B thin films were prepared onto liquid nitrogen (LN) cooled or nonβcooled glass substrates by an UHV flesh evaporation technique. Structural studies showed that the samples deposited onto the LN cooled or nonβcooled glass substrates are amorphous and crystallize after an UHV anne
Spectroscopic ellipsometry has been used to investigate the electronic structure near the fundamental absorption edge of GaAsN alloys grown by metalorganic vapor phase epitaxy. The fundamental absorption edge is clearly observed in the imaginary part of the dielectric function and shifts to lower en