Electronic and transport properties of thin GdCo4B alloy films

✍ Scribed by L. Smardz; T. Toliński; T. Luciński; I. Gościańska; A. Szlaferek; Z. Trybuła; A. Kowalczyk

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 197 KB
• Volume: 3
• Category: Article
• ISSN: 1862-6351
• DOI: 10.1002/pssc.200562479

✦ Synopsis

Abstract

GdCo~4~B thin films were prepared onto liquid nitrogen (LN) cooled or non‐cooled glass substrates by an UHV flesh evaporation technique. Structural studies showed that the samples deposited onto the LN cooled or non‐cooled glass substrates are amorphous and crystallize after an UHV annealing at 873 K. The resistance of the amorphous thin films increases with temperature decreasing from RT down to 4.2 K, while the annealed samples exhibit metallic behaviour. The crystallization process was observed by resistivity measurements in the temperature range varied from RT to 873 K with a rate of 10 K/min. We have observed a systematic change in the shape and peaks position of the XPS valence band after in‐situ annealing of the “as prepared” amorphous GdCo~4~B thin films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)