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Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys

✍ Scribed by H. Yaguchi; S. Matsumoto; Y. Hijikata; S. Yoshida; T. Maeda; M. Ogura; D. Aoki; K. Onabe

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 89 KB
Volume: 228
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200111)228:1<269::aid-pssb269>3.0.co;2-3

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✦ Synopsis

Spectroscopic ellipsometry has been used to investigate the electronic structure near the fundamental absorption edge of GaAsN alloys grown by metalorganic vapor phase epitaxy. The fundamental absorption edge is clearly observed in the imaginary part of the dielectric function and shifts to lower energies with increasing N concentration. In addition, the absorption structure is observed near the E 0 gap energy of GaAs even in GaAsN alloys. This unequivocally shows that the fundamental absorption edge of GaAsN is not shifted from the E 0 gap of GaAs but newly formed by the N incorporation. Thus, the formation of the narrowest band gap of GaAsN alloys is found to be completely different from that of conventional compound semiconductor alloys, such as AlGaAs and GaAsP.

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