Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiple quantum wells electroabsorption modulator structure

✍ Scribed by Yu, J S; Song, J D; Lee, Y T; Lim, H

• Book ID: 121353469
• Publisher: Institute of Physics
• Year: 2005
• Tongue: English
• Weight: 210 KB
• Volume: 20
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/20/8/039