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Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum well

✍ Scribed by Akazaki, Tatsushi; Nitta, Junsaku; Takayanagi, Hideaki; Enoki, Takatomo; Arai, Kunihiro

No coin nor oath required. For personal study only.

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