This paper provides a theoretical survey and further experimental data of kiietically controlled stationary dark and photocurrents on n-GaAs and n-Gap electrodes. The mechanism of anodic photodissolution is treated in greater detail, taking explicitly into account a sequence of kinetic steps. The po
β¦ LIBER β¦
Influence of illumination on the admittance of GaAs and GaP electrodes
β Scribed by B. Wolf; W. Lorenz
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 282 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0013-4686
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β¦ Synopsis
In the course of alternating current measurements on n-GaAs and n-Gap electrodes under illuminatmn we observed large photoeffects upon the electrode admittance or electrode capacity, in the potential range between Aatband and stationary photocurrent onset. General features of the photoadmittance enhancement have been exdored and are briefly presented in this paper. Data on titband determination under illumination aYe included.
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