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On the early deposition of GaP onto GaAs

โœ Scribed by K. Richter


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
381 KB
Volume
17
Category
Article
ISSN
0022-0248

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In the course of alternating current measurements on n-GaAs and n-Gap electrodes under illuminatmn we observed large photoeffects upon the electrode admittance or electrode capacity, in the potential range between Aatband and stationary photocurrent onset. General features of the photoadmittance enh