Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films

✍ Scribed by Chunye Li; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Yang liu; Rensheng Shen; Wangcheng Li; Guoguang Wu; G.T. Du

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 847 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.04.087

✦ Synopsis

a b s t r a c t ZnO thin films were treated by high-pressure hydrogen (H 2 ). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H 2 treatment. X-ray diffraction patterns show that the Zn(OH) 2 phases formed after H 2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H-O-Zn bond.

The phenomenon shows that it is easy to form O-H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance.