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Influence of high energy electron irradiation on the interface states of the Si-SiO2 system

✍ Scribed by S. Kaschieva


Book ID
113285514
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
282 KB
Volume
93
Category
Article
ISSN
0168-583X

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The peculiarities of Si/SiO2 interfaces
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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp