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Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

✍ Scribed by S Miyazaki; T Tamura; M Ogasawara; H Itokawa; H Murakami; M Hirose

Book ID
108416167
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
404 KB
Volume
159-160
Category
Article
ISSN
0169-4332

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✍ Stanislav Jurečka; Hikaru Kobayashi; Masao Takahashi; Taketoshi Matsumoto; MΓ‘ria πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 801 KB

The surface roughness of the semiconductor substrate substantially influences properties of the whole semiconductor/oxide structure. SiO 2 /Si structures were prepared by using low temperature nitric acid oxidation of silicon (NAOS) method and then the whole structure was passivated by the cyanidiza