✦ LIBER ✦

Influence of growth temperature of TiO2 buffer on structure and PL properties of ZnO films

✍ Scribed by Weiying Zhang; Jianguo Zhao; Zhenzhong Liu; Zhaojun Liu; Zhuxi Fu

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 203 KB
Volume: 256
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.12.064

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✦ Synopsis

A series of ZnO films with TiO 2 buffer on Si (1 0 0) substrates were prepared by DC reactive sputtering. Growth temperature of TiO 2 buffer changed from 100 8C to 400 8C, and the influence on the crystal structures and optical properties of ZnO films have been investigated. The XRD results show that the ZnO films with TiO 2 buffer have a hexagonal wurtzite structure with random orientation, and with the increase of growth temperature of TiO 2 buffer, the residual stresses were released gradually. Specially, the UV emission enhanced distinctly and FWHMs (full width half maximum) decreased linearly with the increasing TiO 2 growth temperature. The results all come from the improvement of crystal quality of ZnO films.

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