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Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

✍ Scribed by Kadir, Abdul ;Bellmann, Konrad ;Simoneit, Tino ;Pristovsek, Markus ;Kneissl, Michael


Book ID
115561494
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
758 KB
Volume
209
Category
Article
ISSN
0031-8965

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The influence of the group V/III molar p
✍ Durkaya, G. ;Buegler, M. ;Atalay, R. ;Senevirathna, I. ;Alevli, M. ;Hitzemann, O πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 396 KB

## Abstract The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In~0.65~Ga~0.35~N epilayers has been investigated. The layers studied have been grown by high‐pressure chemical vapor deposition, a growth technique that utilizes the reactor