The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

✍ Scribed by Durkaya, G. ;Buegler, M. ;Atalay, R. ;Senevirathna, I. ;Alevli, M. ;Hitzemann, O. ;Kaiser, M. ;Kirste, R. ;Hoffmann, A. ;Dietz, N.

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 396 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983622

✦ Synopsis

Abstract

The influence of the group V/III molar precursor ratio on the surface morphological and electrical properties of In~0.65~Ga~0.35~N epilayers has been investigated. The layers studied have been grown by high‐pressure chemical vapor deposition, a growth technique that utilizes the reactor pressure as an additional processing parameter. The surface morphology analysis revealed that with the increasing V/III molar precursor ratio, the surface morphology degrades with increasing surface roughness and decreasing average grain areas. The free carrier concentration in the In~0.65~Ga~0.35~N epilayers increased with the increased group V/III molar precursor ratios in the 700–3000 range.