The electronic properties of I n P as an endpoint of the technologically relevant quaternary system InzGal-zAsuP1-y got a renewed interest. This led t o the very accurate determination of the dielectric function E ( E ) = cl(E)
Influence of film structure on the electron energy loss spectra of GaAs thin films
✍ Scribed by Dr. H. Boudriot; Dr. B. Kubier; K. Deus; Dr. R. Gründler; Dr. E. Kusior
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 573 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
Influence of Film Structure on the Electron Energy Loss Spectra of GaAs Thin Films
Energy loss nieasurements of fast electrons on GaAs yielded values for the plasma 0scillation, interband transitions and the dielectric function in the region 5 -30 ev. The results are discussed in comparison with literature statements. It is dealt especially with the influence of the degree of crystallinity of examined GaAs-films on the energy loss spectrum and the quantities derived from it.
Energieverlustmessungon schneller Elektronen an GaAs lieferten Daten fur die Plasmaschwingung, Interbandubergiinge und die dielektrische Funktion im Bereich 5 -30 eV. Die Resultate werden im Vergleich niit Literaturangaben diskutiert. Besonders wird eingegangen auf den EinfluR des Kristallinitiitsgrades der untersuchten GaAs-Schichten auf das Energieverlustspektrum sowie die daraus abgeleiteten GroRen.
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