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Influence of external pressure on thermal expansion and electrical resistivity of UNi2Si2 single crystals

✍ Scribed by F. Honda; G. Oomi; T. Kagayama; A.V. Andreev; V. Sechovský; L. Havela; M.I. Bartashevich; T. Goto; A.A. Menovsky

Book ID
114227703
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
152 KB
Volume
177-181
Category
Article
ISSN
0304-8853

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Thermal expansion and effect of pressure
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✍ G. Oomi; T. Kagayama; Y. Uwatoko 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 224 KB

The electrical resistivity p(T) of CePtSi 2 has been measured up to 20 kbar. It is found that two maxima exist in p(T) at ambient pressure but merge into a broad peak above 10 kbar. The thermal expansion coefficient a(T) is also measured at ambient pressure. A large enhancement in a/T is observed at