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Thermal expansion and effect of pressure on the electrical resistivity of a new dense Kondo compound CePtSi2

โœ Scribed by G. Oomi; T. Kagayama; Y. Uwatoko

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
224 KB
Volume
186-188
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

The electrical resistivity p(T) of CePtSi 2 has been measured up to 20 kbar. It is found that two maxima exist in p(T) at ambient pressure but merge into a broad peak above 10 kbar. The thermal expansion coefficient a(T) is also measured at ambient pressure. A large enhancement in a/T is observed at low temperature.

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โœ M. Sera; M. Sato ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 151 KB

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