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Electrical resistivity and effect of pressure on the thermal expansion of a single crystal of YbCu2Si2

โœ Scribed by Y. Uwatoko; G. Oomi; J.D. Thompson; P.C. Canfield; Z. Fisk


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
208 KB
Volume
186-188
Category
Article
ISSN
0921-4526

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๐Ÿ“œ SIMILAR VOLUMES


Thermal expansion and effect of pressure
โœ G. Oomi; T. Kagayama; Y. Uwatoko ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 224 KB

The electrical resistivity p(T) of CePtSi 2 has been measured up to 20 kbar. It is found that two maxima exist in p(T) at ambient pressure but merge into a broad peak above 10 kbar. The thermal expansion coefficient a(T) is also measured at ambient pressure. A large enhancement in a/T is observed at