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Influence of etching parameters on the defect profile and the depth of damage of AlGaAs induced by ion beam etching

✍ Scribed by K. Otte; F. Frost; A. Schindler; G. Lippold; V. Gottschalch; R.-H. Flagmeyer; F. Bigl

Book ID: 114155824
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 298 KB
Volume: 41-42
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(98)00099-9

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