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Influence of Electron Tunneling Barriers on the Performance of InGaN–GaN Ultraviolet Light-Emitting Diodes

✍ Scribed by Kim, K. C. ;Choi, Y. C. ;Kim, D. H. ;Kim, T. G. ;Yoon, S. H. ;Sone, C. S. ;Park, Y. J.

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
328 KB
Volume
201
Category
Article
ISSN
0031-8965

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## Abstract Efficiency and efficiency retention in InGaN LEDs has recently received considerable attention. In this realm, we investigated internal quantum efficiency (IQE) and relative external quantum efficiency (EQE) of __c__‐plane InGaN LEDs designed for emission at ∼420 nm from the active regi