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Influence of dislocations on gold diffusion into thin silicon slices

โœ Scribed by S.D. Brotherton; T.L. Rogers


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
845 KB
Volume
15
Category
Article
ISSN
0038-1101

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Polishing experiments show that chemomechanical treatment of multicrystalline silicon may cause electrical activation of dislocations, visible in electron-beam-induced current images. Mechanical polishing with A1203 in distilled water has no adverse effect. However, when traces of copper are added,