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Influence of deposition parameters on hole mobility in polymorphous silicon

✍ Scribed by M. Brinza; G.J. Adriaenssens; A. Abramov; P. Roca i Cabarrocas


Book ID
108289557
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
279 KB
Volume
515
Category
Article
ISSN
0040-6090

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## Abstract The influence of the non‐parabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the non‐parabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i